The dynamics of photoinduced defect creation in amorphous chalcogenides: The origin of the stretched exponential function
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F14%3A39898657" target="_blank" >RIV/00216275:25310/14:39898657 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4861143" target="_blank" >http://dx.doi.org/10.1063/1.4861143</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4861143" target="_blank" >10.1063/1.4861143</a>
Alternative languages
Result language
angličtina
Original language name
The dynamics of photoinduced defect creation in amorphous chalcogenides: The origin of the stretched exponential function
Original language description
The article discusses the dynamics of photoinduced defect creations (PDC) in amorphous chalcogenides, which is described by the stretched exponential function (SEF), while the well known photodarkening (PD) and photoinduced volume expansion (PVE) are governed only by the exponential function. It is shown that the exponential distribution of the thermal activation barrier produces the SEF in PDC, suggesting that thermal energy, as well as photon energy, is incorporated in PDC mechanisms. The differencesin dynamics among three major photoinduced effects (PD, PVE, and PDC) in amorphous chalcogenides are now well understood.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/EE2.3.20.0254" target="_blank" >EE2.3.20.0254: Research Team for Advanced Non-crystalline Materials</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
115
Issue of the periodical within the volume
1
Country of publishing house
US - UNITED STATES
Number of pages
4
Pages from-to
"013704-1"-"013704-4"
UT code for WoS article
000329456300030
EID of the result in the Scopus database
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