Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39899434" target="_blank" >RIV/00216275:25310/15:39899434 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2014.11.017" target="_blank" >http://dx.doi.org/10.1016/j.jnoncrysol.2014.11.017</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2014.11.017" target="_blank" >10.1016/j.jnoncrysol.2014.11.017</a>

Result language
angličtina
Original language name
Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films
Original language description
The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CF - Physical chemistry and theoretical chemistry
OECD FORD branch
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Project
<a href="/en/project/GAP106%2F11%2F1152" target="_blank" >GAP106/11/1152: Reversible crystallization and structural relaxation in amorphous materials used for phase change recording</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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