Selective wet etching of amorphous As2Se3 thin films

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39900083" target="_blank" >RIV/00216275:25310/15:39900083 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2015.09.021" target="_blank" >http://dx.doi.org/10.1016/j.jnoncrysol.2015.09.021</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2015.09.021" target="_blank" >10.1016/j.jnoncrysol.2015.09.021</a>

Result language
angličtina
Original language name
Selective wet etching of amorphous As2Se3 thin films
Original language description
Photosensitivity based practical applications of chalcogenide glasses such as high resolution inorganic photoresists require thorough understanding of the relations between the glass structure and the etching kinetics. In this paper we report on the selective wet etching of thermally evaporated As2Se3 thin films carried out using amine based solutions. The relation between photo- and thermo-induced structural changes in thin As2Se3 films and the decrease of the etching rate, increase of the etching process' activation energy respectively, was determined.
Czech name
—
Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Project
<a href="/en/project/EE2.3.30.0058" target="_blank" >EE2.3.30.0058: Development of Research Teams at the University of Pardubice</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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