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Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39901036" target="_blank" >RIV/00216275:25310/15:39901036 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1063/1.4916529" target="_blank" >http://dx.doi.org/10.1063/1.4916529</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1063/1.4916529" target="_blank" >10.1063/1.4916529</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study

  • Original language description

    GeTe is an end-point of the GeTe-Sb2Te3 quasibinary alloys often referred to as phase-change memory materials. The polycrystalline nature of the crystalline films used in devices and the concomitant presence of grain boundaries complicate detailed structural studies of the local structure. Recent progress in the epitaxial growth of phase-change materials offers unique possibilities for precise structural investigations. In this work, we report on results of x-ray absorption near-edge structure (XANES) studies of GeTe and Ge2Sb2Te5 epitaxial films grown on Si and InAs substrates with (100) and (111) orientations. The results show a strong dependence of the local structure on the substrate material and especially orientation and are discussed in conjunction with polycrystalline samples and ab-initio XANES simulations.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

  • CEP classification

    CA - Inorganic chemistry

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ED4.100%2F11.0251" target="_blank" >ED4.100/11.0251: CEMNAT ? Centre of Materials and Nanotechnologies</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Applied Physics

  • ISSN

    0021-8979

  • e-ISSN

  • Volume of the periodical

    117

  • Issue of the periodical within the volume

    12

  • Country of publishing house

    US - UNITED STATES

  • Number of pages

    6

  • Pages from-to

    "125308-1"-"125308-6"

  • UT code for WoS article

    000352315700055

  • EID of the result in the Scopus database