Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F15%3A39901036" target="_blank" >RIV/00216275:25310/15:39901036 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1063/1.4916529" target="_blank" >http://dx.doi.org/10.1063/1.4916529</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1063/1.4916529" target="_blank" >10.1063/1.4916529</a>
Alternative languages
Result language
angličtina
Original language name
Local structure of epitaxial GeTe and Ge2Sb2Te5 films grown on InAs and Si substrates with (100) and (111) orientations: An x-ray absorption near-edge structure study
Original language description
GeTe is an end-point of the GeTe-Sb2Te3 quasibinary alloys often referred to as phase-change memory materials. The polycrystalline nature of the crystalline films used in devices and the concomitant presence of grain boundaries complicate detailed structural studies of the local structure. Recent progress in the epitaxial growth of phase-change materials offers unique possibilities for precise structural investigations. In this work, we report on results of x-ray absorption near-edge structure (XANES) studies of GeTe and Ge2Sb2Te5 epitaxial films grown on Si and InAs substrates with (100) and (111) orientations. The results show a strong dependence of the local structure on the substrate material and especially orientation and are discussed in conjunction with polycrystalline samples and ab-initio XANES simulations.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
CA - Inorganic chemistry
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ED4.100%2F11.0251" target="_blank" >ED4.100/11.0251: CEMNAT ? Centre of Materials and Nanotechnologies</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Applied Physics
ISSN
0021-8979
e-ISSN
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Volume of the periodical
117
Issue of the periodical within the volume
12
Country of publishing house
US - UNITED STATES
Number of pages
6
Pages from-to
"125308-1"-"125308-6"
UT code for WoS article
000352315700055
EID of the result in the Scopus database
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