Luminescence at 2.8 ?m: Er3+-doped chalcogenide micro-waveguide

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901471" target="_blank" >RIV/00216275:25310/16:39901471 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.optmat.2016.06.009" target="_blank" >http://dx.doi.org/10.1016/j.optmat.2016.06.009</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.optmat.2016.06.009" target="_blank" >10.1016/j.optmat.2016.06.009</a>

Result language
angličtina
Original language name
Luminescence at 2.8 ?m: Er3+-doped chalcogenide micro-waveguide
Original language description
This paper reports the fabrication of luminescent optical rib/ridge waveguides made of erbium doped Ga-Ge-Sb-S films deposited by RF magnetron sputtering. Several fluorescence emissions of Er3+ ions from the visible to the middle infrared spectral domain were clearly observed within the films. The study of the 4I(13/2) level lifetime enabled development of a suitable annealing treatment of the films to reach the value of the bulk counterpart while the variation in surface roughness was limited, thus ensuring reasonable optical losses (0.7-0.9 dB/cm). Amplification experiments were carried out at 1.54 ?m leading to complete characterization of the erbium-doped micro-waveguide with 3.4 dB/cm on/off gain. A demonstration of mid-IR photoluminescence from Er3+-doped chalcogenide micro-waveguide was recorded at 2.76 ?m. The multi-luminescence from the visible to mid-IR generated using erbium doped chalcogenide waveguiding micro-structures might find easy-to-use applications concerning telecommunication technologies or on-chip optical sensors for which luminescent sources or amplifiers operating at different wavelengths are required.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JH - Ceramics, fire-proof materials and glass
OECD FORD branch
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Project
<a href="/en/project/GA16-17921S" target="_blank" >GA16-17921S: Heterostructures based on chalcogenides for nonlinear optics and optical sensors</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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