Light and electron beam induced surface patterning in Ge-Se system

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F16%3A39901474" target="_blank" >RIV/00216275:25310/16:39901474 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Light and electron beam induced surface patterning in Ge-Se system
Original language description
Homogeneous Gex-Se1-x thin layers have been prepared by thermal evaporation and pulsed laser deposition technique. Geometrical structures were formed on the surface of the chalcogenide samples by electron beam and photon irradiation methods. The morphology of the created reliefs was investigated by atomic force microscopy. The different aspects of the mechanism of surface relief recording were studied, together with the dependence of the surface relief profile heights on the chalcogen concentration. In addition, the compositions and recording parameters giving the best results were determined.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JH - Ceramics, fire-proof materials and glass
OECD FORD branch
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Project
<a href="/en/project/GA15-02634S" target="_blank" >GA15-02634S: Amorphous chalcogenide thin films: photoinduced phenomena</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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