Co-sputtered amorphous Ge-Sb-Se thin films: Optical properties and structure

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F17%3A39911168" target="_blank" >RIV/00216275:25310/17:39911168 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2264726" target="_blank" >http://dx.doi.org/10.1117/12.2264726</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2264726" target="_blank" >10.1117/12.2264726</a>

Result language
angličtina
Original language name
Co-sputtered amorphous Ge-Sb-Se thin films: Optical properties and structure
Original language description
The amorphous Ge-Sb-Se thin films were fabricated by a rf-magnetron co-sputtering technique employing the following cathodes: GeSe2, Sb2Se3 and Ge28Sb12Se60. In the present work, the influence of the composition determined by energy-dispersive X-ray spectroscopy on the optical properties was studied. Optical bandgap energy was determined using variable angle spectroscopic ellipsometry. The morphology and topography of the selenide sputtered films was studied by scanning electron microscopy and atomic force microscopy.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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