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Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F19%3A39915094" target="_blank" >RIV/00216275:25310/19:39915094 - isvavai.cz</a>

  • Alternative codes found

    RIV/00216224:14310/19:00108152

  • Result on the web

    <a href="https://www.nature.com/articles/s41598-019-55773-9" target="_blank" >https://www.nature.com/articles/s41598-019-55773-9</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41598-019-55773-9" target="_blank" >10.1038/s41598-019-55773-9</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Amorphous Ge-Bi-Se Thin Films: A Mass Spectrometric Study

  • Original language description

    The Ge-Bi-Se thin films of varied compositions (Ge content 0-32.1 at. %, Bi content 0-45.7 at. %, Se content 54.3-67.9 at. %) have been prepared by rf magnetron (co)-sputtering technique. The present study was undertaken in order to investigate the clusters generated during the interaction of laser pulses with Ge-Bi-Se thin films using laser ablation time-of-flight mass spectrometry. The stoichiometry of the clusters was determined in order to understand the individual species present in the plasma plume. Laser ablation of Ge-Bi-Se thin films accompanied by ionization produces about 20 positively and/or negatively charged unary, binary and ternary (Ge-x(+), Bi-y(+), Se-z(+/-), GexSez+/-, BiySez+/- and GexBiySez-) clusters. Furthermore, we performed the laser ablation experiments of Ge:Bi:Se elemental mixtures and the results were compared with laser ablation time-of-flight mass spectrometry analysis of thin films. Moreover, to understand the geometry of the generated clusters, we calculated structures of some selected binary and ternary clusters using DFT. The generated clusters and their calculated possible geometries can give important structural information, as well as help to understand the processes present in the plasma processes exploited for thin films deposition.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20506 - Coating and films

Result continuities

  • Project

    <a href="/en/project/GA18-03823S" target="_blank" >GA18-03823S: Advanced methods of fabrication of chalcogenide thin films and their modifications</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Scientific Reports

  • ISSN

    2045-2322

  • e-ISSN

  • Volume of the periodical

    9

  • Issue of the periodical within the volume

    December

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    10

  • Pages from-to

    "19168-1"-"19168-10"

  • UT code for WoS article

    000503187500003

  • EID of the result in the Scopus database