Amorphous Ga-Sb-Se thin films fabricated by co-sputtering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916691" target="_blank" >RIV/00216275:25310/20:39916691 - isvavai.cz</a>
Result on the web
<a href="https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-1-29" target="_blank" >https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-1-29</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OL.45.000029" target="_blank" >10.1364/OL.45.000029</a>

Result language
angličtina
Original language name
Amorphous Ga-Sb-Se thin films fabricated by co-sputtering
Original language description
This work deals with the optical properties and photosensitivity of Ga-Sb-Se thin films deposited by cosputtering, enabling to fabricate amorphous thin films outside the glass-forming region. The optical bandgap range of 1.92-1.35 eV with corresponding refractive indices at 1550 nm ranging from 2.47 to 3.33 can be reliably covered using Ga2Se3 and Sb2Se3 targets. Furthermore, the prolonged irradiation by the near-bandgap light under the pure argon atmosphere leads to the irreversible photo-bleaching effect in fabricated films. The magnitude of this effect decreases monotonically with an increasing antimony content.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20506 - Coating and films

Project
<a href="/en/project/GA19-24516S" target="_blank" >GA19-24516S: Chalcogenide films doped with rare-earth ions for gas sensing in the mid-infrared spectral region</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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