GaTe-Sb2Te3 thin-films phase change characteristics

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F20%3A39916693" target="_blank" >RIV/00216275:25310/20:39916693 - isvavai.cz</a>
Result on the web
<a href="https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-5-1067" target="_blank" >https://www.osapublishing.org/ol/abstract.cfm?uri=ol-45-5-1067</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1364/OL.386779" target="_blank" >10.1364/OL.386779</a>

Result language
angličtina
Original language name
GaTe-Sb2Te3 thin-films phase change characteristics
Original language description
A radio frequency magnetron co-sputtering technique exploiting GaTe and Sb2Te3 targets was used for the fabrication of Ga-Sb-Te thin films. Prepared layers cover broad region of chemical composition (~10.0-26.3 at. % of Ga, ~19.9-34.4 at. % of Sb) while keeping Te content fairly constant (53.8-55.6 at. % of Te). Upon crystallization induced by annealing, large variations in electrical resistivity were found, especially for the Ga26.3Sb19.9Te33.8 layer. Phase transition from the amorphous to crystalline state further leads to huge changes of optical functions demonstrated by optical contrast values up to 4.20 for Ga26.3Sb19.9Te53.8 composition.
Czech name
—
Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20506 - Coating and films

Project
<a href="/en/project/GA18-03823S" target="_blank" >GA18-03823S: Advanced methods of fabrication of chalcogenide thin films and their modifications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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