Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F24%3A39922223" target="_blank" >RIV/00216275:25310/24:39922223 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S0254058424001421?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0254058424001421?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.matchemphys.2024.129018" target="_blank" >10.1016/j.matchemphys.2024.129018</a>

Result language

angličtina

Original language name

Near-surface viscosity and complex crystal growth behavior in Se90Te10 thin films and bulk surface

Original language description

Considering the resurgence of interest in selenium and tellurium -based solar cells and the inter alia related relationship between the device efficiency and post -growth annealing for crystallization, increased attention should be given to the understanding of crystallization process (formation of crystals, crystal positions, and nucleation and crystal growth kinetics). This work summarizes an extensive study of the crystal growth rates and near -surface viscosity at the Se90Te10 bulk surface and in thin films using nanoindentation and measurements of thermal grating decay. The crystal growth in Se90Te10 thin films occurs at two positions - at the thin filmsubstrate interface and the free surface of the thin film. Here, the crystallization of the interface crystals was quantitatively studied using microscopy down to the Tg and below. The influence of different substrates, illumination, and aging on crystal growth rates was tested in the studied thin films to understand the crystal growth properly. Regarding the crystal growth at the bulk surface, the sample size -dependent crystal growth rates were found. The values can be found in the region limited by growth rates of volume crystals (lower limit) and those found in thin films (upper limit). The growth data are combined with the near -surface viscosities measured in bulk samples and thin films to assess a suitable growth model for the description and prediction of the growth data in a wide temperature range.

Czech name

—

Czech description

—

Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

—

OECD FORD branch

20501 - Materials engineering

Project

<a href="/en/project/GJ20-02183Y" target="_blank" >GJ20-02183Y: Kinetic processes in chalcogenide bulks and thin films – correlation between crystal growth, viscosity and self-diffusion</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2024

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Materials Chemistry and Physics

ISSN

0254-0584

e-ISSN

1879-3312

Volume of the periodical

316

Issue of the periodical within the volume

April 2024

Country of publishing house

CH - SWITZERLAND

Number of pages

13

Pages from-to

129018

UT code for WoS article

001198787300001

EID of the result in the Scopus database

2-s2.0-85185398229