Electrical transport and dielectric relaxation in 5Fe2O3-40ZnO-55P2O5 iron zinc phosphate bulk glass

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25310%2F25%3A39922211" target="_blank" >RIV/00216275:25310/25:39922211 - isvavai.cz</a>

Result on the web

<a href="https://www.sciencedirect.com/science/article/pii/S0022309324004873" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022309324004873</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jnoncrysol.2024.123311" target="_blank" >10.1016/j.jnoncrysol.2024.123311</a>

Result language

angličtina

Original language name

Electrical transport and dielectric relaxation in 5Fe2O3-40ZnO-55P2O5 iron zinc phosphate bulk glass

Original language description

Electrical Impedance Spectroscopy (EIS) and Optical Spectroscopy (OS) experimental techniques have been used to investigate some basic and important aspects of the electronic band structure, electrical transport and dielectric relaxation in 5Fe2O3–40ZnO–55P2O5 iron zinc phosphate bulk glass. The temperature dependence of the dc electrical conductivity, as determined by EIS, showed a simple Arhenius behaviour, with activation energy of ~1 eV, a value shared by a large number of other glassy systems. The EIS measurements revealed also a number of discrete dielectric relaxation processes, some of them possessing a non-exponential “universal” behaviour. The temperature dependence of the characteristic frequency of one of these dielectric relaxation processes was found to be related to the observed values of dc electrical conductivity at the same temperatures through Barton-Namikawa-Nakajima (BNN) relation. Based on the analysis of both the optical and the electrical measurements, it is concluded that the dc electrical transport is due to hole small polaron hopping, but the Fe sites are not the hopping sites. Rather, the added Fe atoms in their possible different charge states within theglassy matrix act as strongly localised acceptor sites (bands) and the dc electrical transport then takes place via self-trapped holes, originating from the remaining singly occupied electron states (holes) at the top of the valence band tails in studied glass. The existence of “defect” acceptor bands in the vicinity of the valence bands in wider band gap glassy materials and subsequent hole self-trapping is proposed to be a general trend and the cause of largely p-type behaviour and polaronic type of electrical conduction in these systems.

Czech name

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Czech description

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Type

J_imp - Article in a specialist periodical, which is included in the Web of Science database

CEP classification

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OECD FORD branch

20500 - Materials engineering

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2025

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Non-Crystalline Solids

ISSN

0022-3093

e-ISSN

1873-4812

Volume of the periodical

648

Issue of the periodical within the volume

January 2025

Country of publishing house

NL - THE KINGDOM OF THE NETHERLANDS

Number of pages

16

Pages from-to

123311

UT code for WoS article

001443746200001

EID of the result in the Scopus database

2-s2.0-85209569906