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Multilevel resistive switching in Cu and Ag doped CBRAM device

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25530%2F18%3A39913801" target="_blank" >RIV/00216275:25530/18:39913801 - isvavai.cz</a>

  • Alternative codes found

    RIV/61389013:_____/18:00493358

  • Result on the web

    <a href="https://link.springer.com/article/10.1007/s10854-018-9778-5" target="_blank" >https://link.springer.com/article/10.1007/s10854-018-9778-5</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s10854-018-9778-5" target="_blank" >10.1007/s10854-018-9778-5</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Multilevel resistive switching in Cu and Ag doped CBRAM device

  • Original language description

    A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as &quot;one pulse SET method&quot;. The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20401 - Chemical engineering (plants, products)

Result continuities

  • Project

    <a href="/en/project/LM2015082" target="_blank" >LM2015082: Center of Materials and Nanotechnologies</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Others

  • Publication year

    2018

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Journal of Materials Science: Materials in Electronics

  • ISSN

    0957-4522

  • e-ISSN

  • Volume of the periodical

    29

  • Issue of the periodical within the volume

    19

  • Country of publishing house

    DE - GERMANY

  • Number of pages

    5

  • Pages from-to

    "16836–16841"

  • UT code for WoS article

    000444763400073

  • EID of the result in the Scopus database