Multilevel resistive switching in Cu and Ag doped CBRAM device

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216275%3A25530%2F18%3A39913801" target="_blank" >RIV/00216275:25530/18:39913801 - isvavai.cz</a>
Alternative codes found
RIV/61389013:_____/18:00493358
Result on the web
<a href="https://link.springer.com/article/10.1007/s10854-018-9778-5" target="_blank" >https://link.springer.com/article/10.1007/s10854-018-9778-5</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-018-9778-5" target="_blank" >10.1007/s10854-018-9778-5</a>

Result language
angličtina
Original language name
Multilevel resistive switching in Cu and Ag doped CBRAM device
Original language description
A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as "one pulse SET method". The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
—
OECD FORD branch
20401 - Chemical engineering (plants, products)

Project
<a href="/en/project/LM2015082" target="_blank" >LM2015082: Center of Materials and Nanotechnologies</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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