Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F08%3APU71376" target="_blank" >RIV/00216305:26210/08:PU71376 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering
Original language description
Time of flight low energy ion scattering is used to quantitatively characterize the growth mode of Au deposited on B. Information on the filling factor (surface area coverage) is deduced from the yield of backscattered ions and the spectrum height of scattered neutrals. From the variation of the filling factor with the nominal Au thickness, cluster growth is deduced. Information on the average cluster height is obtained from the energy distribution of scattered neutrals and the comparison with computersimulation. Finally, an estimate of the aspect ratios is obtained for the clusters from the filling factor and the cluster height.
Czech name
Kvantitativní analýza růstu ultratenkých vrstev pomocí rozptylu nízkoenergetických iontů metodou time-of-flight
Czech description
Kvantitativní analýza růstu ultratenkých vrstev pomocí rozptylu nízkoenergetických iontů metodou time-of-flight

Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Project
<a href="/en/project/LC06040" target="_blank" >LC06040: Structures for Nanophotonics and Nanoelectronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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