Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F09%3APU80279" target="_blank" >RIV/00216305:26210/09:PU80279 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film

Original language description

We present a straightforward method for fabrication of patterns of metallic nanostructures. The focused ion beam lithography (FIB) has been used to locally modify a native SiO2 layer on a silicon substrate. On the modified areas preferential nucleation of cobalt islands is observed. The cobalt islands formed upon deposition at 400 - 430 C combined with an intermediate annealing at 550 C have a uniform size distribution and their size can be controlled by the distance between the nucleation sites and theamount of deposited material. It is proposed that the island formation at patterned sites is due to reduced surface diffusion of Co atoms in the vicinity of FIB modified areas. The intermediate annealing improves the island morphology since the kineticdiffusion limits are lowered and system reconfigures towards its equilibrium state.

Czech name

Selektivní růst kobaltových ostrůvků na nukleačních místech vytvořených pomocí fokusovaného iontového svazku ve vrstvě nativního SiO2

Czech description

Selektivní růst kobaltových ostrůvků na nukleačních místech vytvořených pomocí fokusovaného iontového svazku ve vrstvě nativního SiO2

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Aplied Physics

ISSN

0021-8979

e-ISSN

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Volume of the periodical

105

Issue of the periodical within the volume

8

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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