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Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU135261" target="_blank" >RIV/00216305:26210/19:PU135261 - isvavai.cz</a>

  • Result on the web

    <a href="https://link.springer.com/article/10.1007/s10854-018-00619-9" target="_blank" >https://link.springer.com/article/10.1007/s10854-018-00619-9</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1007/s10854-018-00619-9" target="_blank" >10.1007/s10854-018-00619-9</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level

  • Original language description

    Perovskite-oxide materials have grabbed enormous attention from various research groups all over the world due to their large application areas. The band-gap engineering of those materials are important for optoelectronic researches especially for ferroelectric (FE) solar cells that have unique features such as having higher open circuit voltages than the band gap and their spontaneous polarization which leads to photovoltaic effect. Nevertheless, the most of the perovskite FE materials have wide band gaps that hamper the absorption of large solar spectrum. In the present study, it has been demonstrated the band gap of YMnO3 (YMO), which is one of the mostly studied FE materials, can be tuned via doping osmium (Os) into manganese (Mn) site. The band gap of YMO, 2.10eV successfully is lowered to 1.61eV. Polycrystalline YMnO3 and YMn1-xOsxO3 (YMOO) (x=0.01, 0.05, 0.10) thin films were synthesized on indium tin oxide (ITO) substrates at 500 degrees C by magnetron sputtering method. Their structural, chemical and optical band-gap properties were studied and the results showed the Os doped YMO compounds could be a potential candidate for future ferroelectric solar cell studies.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

  • ISSN

    0957-4522

  • e-ISSN

    1573-482X

  • Volume of the periodical

    30

  • Issue of the periodical within the volume

    4

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    9

  • Pages from-to

    3443-3451

  • UT code for WoS article

    000460643200029

  • EID of the result in the Scopus database

    2-s2.0-85059527411