Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F19%3APU135261" target="_blank" >RIV/00216305:26210/19:PU135261 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/article/10.1007/s10854-018-00619-9" target="_blank" >https://link.springer.com/article/10.1007/s10854-018-00619-9</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-018-00619-9" target="_blank" >10.1007/s10854-018-00619-9</a>
Alternative languages
Result language
angličtina
Original language name
Tailoring the band gap of ferroelectric YMnO3 through tuning the Os doping level
Original language description
Perovskite-oxide materials have grabbed enormous attention from various research groups all over the world due to their large application areas. The band-gap engineering of those materials are important for optoelectronic researches especially for ferroelectric (FE) solar cells that have unique features such as having higher open circuit voltages than the band gap and their spontaneous polarization which leads to photovoltaic effect. Nevertheless, the most of the perovskite FE materials have wide band gaps that hamper the absorption of large solar spectrum. In the present study, it has been demonstrated the band gap of YMnO3 (YMO), which is one of the mostly studied FE materials, can be tuned via doping osmium (Os) into manganese (Mn) site. The band gap of YMO, 2.10eV successfully is lowered to 1.61eV. Polycrystalline YMnO3 and YMn1-xOsxO3 (YMOO) (x=0.01, 0.05, 0.10) thin films were synthesized on indium tin oxide (ITO) substrates at 500 degrees C by magnetron sputtering method. Their structural, chemical and optical band-gap properties were studied and the results showed the Os doped YMO compounds could be a potential candidate for future ferroelectric solar cell studies.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
ISSN
0957-4522
e-ISSN
1573-482X
Volume of the periodical
30
Issue of the periodical within the volume
4
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
9
Pages from-to
3443-3451
UT code for WoS article
000460643200029
EID of the result in the Scopus database
2-s2.0-85059527411