Landau level spectroscopy of Bi2Te3

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26210%2F20%3APU139666" target="_blank" >RIV/00216305:26210/20:PU139666 - isvavai.cz</a>
Result on the web
<a href="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.085201" target="_blank" >https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.085201</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1103/PhysRevB.102.085201" target="_blank" >10.1103/PhysRevB.102.085201</a>

Result language
angličtina
Original language name
Landau level spectroscopy of Bi2Te3
Original language description
Here we report on Landau level spectroscopy in magnetic fields up to 34 T performed on a thin film of the topological insulator Bi2Te3 epitaxially grown on a BaF2 substrate. The observed response is consistent with the picture of a direct-gap semiconductor in which charge carriers closely resemble massive Dirac particles. The fundamental band gap reaches E-g = (175 +/- 5) meV at low temperatures and it is not located on the trigonal axis, thus displaying either sixfold or twelvefold valley degeneracy. Interestingly, our magneto-optical data do not indicate any band inversion at the direct gap. This suggests that the fundamental band gap is relatively distant from the Gamma point where profound inversion exists and gives rise to the relativisticlike surface states of Bi2Te3.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering

Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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