The Tantalum Capacitor as a MIS Structure in Reverse Mode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU21528" target="_blank" >RIV/00216305:26220/01:PU21528 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
The Tantalum Capacitor as a MIS Structure in Reverse Mode
Original language description
The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/ME%20285" target="_blank" >ME 285: Development of Advanced Devices for Global Communication</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001
ISBN
0887-7491
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
289-292
Publisher name
Components Technology Institute, Inc.
Place of publication
Huntsville, Alabama, USA
Event location
St. Petersburg, Florida, USA
Event date
Mar 25, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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