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The Tantalum Capacitor as a MIS Structure in Reverse Mode

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU21528" target="_blank" >RIV/00216305:26220/01:PU21528 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    The Tantalum Capacitor as a MIS Structure in Reverse Mode

  • Original language description

    The charge carrier transport mechanisms in a tantalum capacitor are discussed and VA characteristics both in normal and reverse mode are explained on the basis of metal (Ta) - insulator (Ta2O5) - semiconductor (MnO2) MIS structure model. The leakage current temperature dependencies were measured to determine energy band parameters.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/ME%20285" target="_blank" >ME 285: Development of Advanced Devices for Global Communication</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2001

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of 21st Capacitor and Resistor technology Symposium CARTS US 2001

  • ISBN

    0887-7491

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    289-292

  • Publisher name

    Components Technology Institute, Inc.

  • Place of publication

    Huntsville, Alabama, USA

  • Event location

    St. Petersburg, Florida, USA

  • Event date

    Mar 25, 2001

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article