Correlated NMOS Statistical Model

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F01%3APU24827" target="_blank" >RIV/00216305:26220/01:PU24827 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Correlated NMOS Statistical Model
Original language description
Monte-Carlo analysis of MOS circuits requires the generation of multiple sets of input parameters for the simulator's models. Since the model parameters can be highly correlated, the methods by which these input parameters are determined is critical foraccurate results. The paper briefly reviews the principal techniques for the generation of MOSFET correlated model parameters and gives an example of statistical characterization of MOS2 model parameter VFB ? flat band voltage which is used as an indeependent statistical model parameter. The comparison of correlated and uncorrelated models is presented.
Czech name
—
Czech description
—

Project
<a href="/en/project/GA102%2F00%2F0939" target="_blank" >GA102/00/0939: Integrated intelligent microsensors and microsystems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2001
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Socrates Workshop 2001. Intensive Training Programme in Electronic System Design. Proceedings, Crete 3 - 12, 2001. Edited by V. Musil and J. Brzobohaty
ISBN
80-214-2027-8
ISSN
—
e-ISSN
—
Number of pages
8
Pages from-to
282-289
Publisher name
Vyd. Ing. Zdeněk Novotný, Brno, 2001
Place of publication
Brno
Event location
Chania, Crete, Greece
Event date
Sep 3, 2001
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)