Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU28924" target="_blank" >RIV/00216305:26220/02:PU28924 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Measurement of local photoluminescence and optically induced photocurrent in semiconductor structures

Original language description

Near-field local Photoluminescence (PL) and photocurrent (PC) spectroscopic techniques are used to study of semiconductor quantum structures using a technique of reflection Scanning Near-field Optical Microscope (r-SNOM) in combination with Nitrogen laser and tuning dye laser. r-SNOM employs an uncoated and/or Au-metallized single-mode fiber tip both as nanosource and a nanoprobe. Due to the high lateral resolution of the microscope, it is possible to locate e.g. defects in a multiple quantum well grownn by molecular beam epitaxy. Near-field characteristics of measured quantities are also discussed.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

BH - Optics, masers and lasers

OECD FORD branch

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Project

<a href="/en/project/OC%20523.40" target="_blank" >OC 523.40: Nanostructures: Optical and Electrical Characteristics</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2002

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Photonics Prague 2002

ISBN

80-86114-46-5

ISSN

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e-ISSN

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Number of pages

1

Pages from-to

146-146

Publisher name

Tech-Market,Praha

Place of publication

Praha

Event location

Praha

Event date

May 26, 2002

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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