Transistor Models Paramter Extraction
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30426" target="_blank" >RIV/00216305:26220/02:PU30426 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Transistor Models Paramter Extraction
Original language description
Direct extraction methods are believed to be far from providing the accuracy an optimized-based extraction is capable of producing. On the other hand optimization-based extraction generates models leaving physical meaning of their parameters. To generateboth accurate and physical models much effort is needed in developing direct and optimization-based extraction methods. The paper reviews the fudamental problems connected with these methods and brings the example of extractor generating optimized physsically correct transistor models.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design
ISBN
80-214-2217-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
103-106
Publisher name
Ing. Z. Novotný, Brno 2002
Place of publication
Brno
Event location
Chania, Crete
Event date
Sep 2, 2002
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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