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Transistor Models Paramter Extraction

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU30426" target="_blank" >RIV/00216305:26220/02:PU30426 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Transistor Models Paramter Extraction

  • Original language description

    Direct extraction methods are believed to be far from providing the accuracy an optimized-based extraction is capable of producing. On the other hand optimization-based extraction generates models leaving physical meaning of their parameters. To generateboth accurate and physical models much effort is needed in developing direct and optimization-based extraction methods. The paper reviews the fudamental problems connected with these methods and brings the example of extractor generating optimized physsically correct transistor models.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2002

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Socrates Workshop 2002 - Proceedings. Intensive Training Programme in Electronic System Design

  • ISBN

    80-214-2217-3

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    103-106

  • Publisher name

    Ing. Z. Novotný, Brno 2002

  • Place of publication

    Brno

  • Event location

    Chania, Crete

  • Event date

    Sep 2, 2002

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article