Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F02%3APU52212" target="_blank" >RIV/00216305:26220/02:PU52212 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Electron Mobility, Carrier Concentration and Noise Parameter of n-GaN - Numerical Analyses by Quantum Transport
Original language description
Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.
Czech name
Elektronová pohyblivost, koncentrace nosičů náboje a šumový parametr n-GaN - numerická analýza kvantového transportu
Czech description
Electron mobility, charge carrier concentration, resistivity and Hooge noise parameter of epitaxial n-GaN layer was analysed in terms of several scattering mechanisms and Handel quantum theory of noise. Numerical model in temperature range 20-300K was compared with experimental results of noise and Hall measurements and we found good agreement.

Publication year
2002
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 13th Symposium on Advanced Materials
ISBN
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ISSN
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e-ISSN
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Number of pages
4
Pages from-to
132-135
Publisher name
Meisei Univeristy
Place of publication
Tokio
Event location
Meisei University, Tokyo, Japan
Event date
Nov 16, 2002
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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