On the effect of space charge layer transport processes on the diode and transistor current-voltage characteristics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39329" target="_blank" >RIV/00216305:26220/03:PU39329 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
On the effect of space charge layer transport processes on the diode and transistor current-voltage characteristics
Original language description
The effect of processes inside the space charge layers of a pn junction diode and bipolar transistor on the total current is investigated and some analytical formulae are derived.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
10th Electronic devices and systems conference 2003
ISBN
80-214-2452-4
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
276-281
Publisher name
Brno University of Technology
Place of publication
Brno
Event location
Brno
Event date
Sep 9, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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