Towards nanometer scale MOSFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39331" target="_blank" >RIV/00216305:26220/03:PU39331 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Towards nanometer scale MOSFETs
Original language description
Two theoretical methods, the effective mass approximation and the tight binding method, that can be used for nanoscale MOSFETs modeling are briefly described, Both methods can be implemented on a PC computer and both give satisfactory results.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings od the Socrates Workshop 2003. Intensive Training Programme in Electronic System Design.
ISBN
80-214-2461-3
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
159-164
Publisher name
Technological Institute of Crete, Chania, Greece
Place of publication
Chania, Greece
Event location
Technological Institute of Crete, Chania, Greece
Event date
Sep 22, 2003
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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