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Floating gate MOSFET for low power applications

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39439" target="_blank" >RIV/00216305:26220/03:PU39439 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Floating gate MOSFET for low power applications

  • Original language description

    Circuits using floating-gate MOS transistors are well known from EPROMs, EEPROMs, and flash memories. Floating-gate circuits provide IC designers with a practical continuous-time capacitor-based technology, instead of the resistor-based technology used in discrete circuits. A floating gate occurs when we have no dc path to a fixed potential, precisely the effect traditionally avoided by many circuit designers and circuit simulators. The floating-gate voltage can modulate a channel between a source and ddrain and therefore can be used in computation. Capacitors coupling into this floating gate become effective gates of this transistor, where the gate strength depends upon the capacitor size. Floating-gate devices can become integral parts of continuous-time amplifiers and filters. In Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers and other applications.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GA102%2F03%2F0721" target="_blank" >GA102/03/0721: Design methodology for analogue integrated circuits in new technologies</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2003

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proceedings of the Socrates Workshop. Short Contributions

  • ISBN

    80-214-2461-3

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    76-79

  • Publisher name

    Technological Institute of Crete, Chania, Greece

  • Place of publication

    Chania, Greece

  • Event location

    Technological Institute of Crete, Chania, Greece

  • Event date

    Sep 22, 2003

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article