Floating gate MOSFET for low power applications
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F03%3APU39439" target="_blank" >RIV/00216305:26220/03:PU39439 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Floating gate MOSFET for low power applications
Original language description
Circuits using floating-gate MOS transistors are well known from EPROMs, EEPROMs, and flash memories. Floating-gate circuits provide IC designers with a practical continuous-time capacitor-based technology, instead of the resistor-based technology used in discrete circuits. A floating gate occurs when we have no dc path to a fixed potential, precisely the effect traditionally avoided by many circuit designers and circuit simulators. The floating-gate voltage can modulate a channel between a source and ddrain and therefore can be used in computation. Capacitors coupling into this floating gate become effective gates of this transistor, where the gate strength depends upon the capacitor size. Floating-gate devices can become integral parts of continuous-time amplifiers and filters. In Ultra-Low-Voltage Floating-Gate Transconductance Amplifiers and other applications.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F03%2F0721" target="_blank" >GA102/03/0721: Design methodology for analogue integrated circuits in new technologies</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the Socrates Workshop. Short Contributions
ISBN
80-214-2461-3
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
76-79
Publisher name
Technological Institute of Crete, Chania, Greece
Place of publication
Chania, Greece
Event location
Technological Institute of Crete, Chania, Greece
Event date
Sep 22, 2003
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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