Design of NbN Superconducting Band Pass Filters at 30GHz for High Speed RSFQ Data converter

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU76060" target="_blank" >RIV/00216305:26220/08:PU76060 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Design of NbN Superconducting Band Pass Filters at 30GHz for High Speed RSFQ Data converter

Original language description

We are presenting the design of planar band pass (BP) filter with 30 GHz center frequency. The filter is designed as front selective and impedance matching circuit for RSFQ based (Rapid Single Flux Quantum) A/D converter operating at 9K. It will be implemented in NbN thin superconducting films (critical temperature Tc=16K) on a Si+SiO2 substrate. The design approach is experimentally verified at lower frequencies (5GHz) by structures realized on RO3006 substrate [1]. In the design, we aim to reach a high attenuation in the stopband and the variable output impedance of filter. We have designed a first NbN CPW filter for extracting parameters from our fabrication process. The measured parameters (kinetic inductance, London penetration depth etc.) will beused for adjusting of the future design of 50 ohm/2 ohm CPW filter

Czech name

Design of NbN Superconducting Band Pass Filters at 30GHz for High Speed RSFQ Data converter

Czech description

We are presenting the design of planar band pass (BP) filter with 30 GHz center frequency. The filter is designed as front selective and impedance matching circuit for RSFQ based (Rapid Single Flux Quantum) A/D converter operating at 9K. It will be implemented in NbN thin superconducting films (critical temperature Tc=16K) on a Si+SiO2 substrate. The design approach is experimentally verified at lower frequencies (5GHz) by structures realized on RO3006 substrate [1]. In the design, we aim to reach a high attenuation in the stopband and the variable output impedance of filter. We have designed a first NbN CPW filter for extracting parameters from our fabrication process. The measured parameters (kinetic inductance, London penetration depth etc.) will beused for adjusting of the future design of 50 ohm/2 ohm CPW filter

Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2008

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proceedings of the International Workshop on Teleinformatics and Electromagnetic Field

ISBN

978-80-214-3718-0

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

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Publisher name

UTEE, FEKT VUT v Brně

Place of publication

Paris

Event location

Paříž

Event date

Sep 8, 2008

Type of event by nationality

EUR - Evropská akce

UT code for WoS article

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