Gate oxide failure model of MOS transistors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F08%3APU78948" target="_blank" >RIV/00216305:26220/08:PU78948 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—
Alternative languages
Result language
angličtina
Original language name
Gate oxide failure model of MOS transistors
Original language description
Gate oxide failure model of MOS transistors
Czech name
Model poruch v oxidu pro tranzistor MOS
Czech description
Model poruch v oxidu pro tranzistor MOS
Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
—
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2008
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Electronic Devices nad Systems 2008
ISBN
978-80-214-3717-3
ISSN
—
e-ISSN
—
Number of pages
6
Pages from-to
—
Publisher name
Z. Novotný
Place of publication
Brno
Event location
Brno
Event date
Sep 10, 2008
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—