RTS noise and location of traps in MOSFETs

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU81663" target="_blank" >RIV/00216305:26220/09:PU81663 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
RTS noise and location of traps in MOSFETs
Original language description
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from subthreshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.
Czech name
RTS šum a poloha pastí v tranzistorech MOSFET
Czech description
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from subthreshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.

Project
<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
EDS '09 IMAPS CS International Conference Proceedings
ISBN
978-80-214-3933-7
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
VUT
Place of publication
Brno
Event location
Brno
Event date
Sep 2, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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