GRT Model of RTS Noise in MOSFETs

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F09%3APU82371" target="_blank" >RIV/00216305:26220/09:PU82371 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
GRT Model of RTS Noise in MOSFETs
Original language description
Random Telegraph Signal (RTS) noise in submicron MOSFETs showing a capture process, which deviates from the standard Shockley-Read-Hall kinetics, is analyzed using generation-recombination-tunneling model of current modulation in order to explain quadratic dependence of capture rate on current. Proposed model of two-step charge carrier quantum transitions involving secondary trap at the channel and gate oxide interface better represents observed complex switching phenomena in nanoscale devices, as is confirmed by presented experimental results.
Czech name
—
Czech description
—

Project
<a href="/en/project/GA102%2F09%2F1920" target="_blank" >GA102/09/1920: Stochastic Phenomena in MIS and MIM Semiconductor Structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2009
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proc. IEEE 21st Int. Conf. on Microelectronics ICM 2009
ISBN
978-1-4244-5815-8
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
—
Publisher name
IEEE
Place of publication
Neuveden
Event location
Marrakéš
Event date
Dec 19, 2009
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)