RTS noise amplitude and electron concentration in MOSFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU87415" target="_blank" >RIV/00216305:26220/10:PU87415 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
RTS noise amplitude and electron concentration in MOSFETs
Original language description
Random Telegraph Signal (RTS) noise was measured in submicron MOSFETs under various biasing conditions from sub threshold to inversion region and dependence of amplitude and mean time of capture and emission on electric field and electron concentration analyzed. Numerical model of charge carrier transport in the channel was used to estimate trap position between the source and drain electrodes from experimental characteristics.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. 27th Int. Conf. on Microelectronics MIEL 2010, Niš, Serbia, 16-19 May, 2010
ISBN
978-1-4244-7200-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
IEEE
Place of publication
Nis, Serbia
Event location
Niš
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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