Light emission from silicon solar cells as characterization technique

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU89127" target="_blank" >RIV/00216305:26220/10:PU89127 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Light emission from silicon solar cells as characterization technique
Original language description
The paper describes local photoelectric measurement results obtained with monocrystalline silicon solar cell in visible light. The measurement allows localize, with high spatial resolution, a weak light emission from defects at reverse bias voltage as low as 3 V, which does not exhibit any relation to current-voltage characteristics (no local breakdowns). Other types of defects observed under forward bias using electroluminescence (EL) and light induced beam current (LBIC) techniques are also visualized. The measurements should contribute to find a correlation between EL and modified LBIC results.
Czech name
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Czech description
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Project
<a href="/en/project/GA102%2F08%2F1474" target="_blank" >GA102/08/1474: Local optical and electronic characterisation of optoelectronic structures with nanometric resolution</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2010 9th International Conference on Environment and Electrical Engineering
ISBN
978-1-4244-5371-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
Reprotechnika Wroclaw
Place of publication
Wroclaw
Event location
Praha
Event date
May 16, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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