Memristor modeling based on its constitutive relation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F10%3APU90063" target="_blank" >RIV/00216305:26220/10:PU90063 - isvavai.cz</a>
Alternative codes found
RIV/60162694:G43__/10:00421650
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Memristor modeling based on its constitutive relation
Original language description
Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. Theconstitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. Most hitherto published memristor models start from its state-space representation. Another approach is described in this paper, utilizing the unambiguous memristor characteristics, the so-called constitutive relation, i.e. the flux-charge relation. The constitutive relation is independent of the way the memristor interacts with its surroundings, and it determines the memristor uniquely like, for example, the voltage-current characteristic defines the resistor. The method is used for SPICE modeling of charge- and flux-controlled
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F10%2F1614" target="_blank" >GAP102/10/1614: Memristive, memcapacitative, and meminductive systems: basic research, modeling, and simulation</a><br>
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2010
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the European Conference of Circuits Technology and Devices (ECCTD'10)
ISBN
978-960-474-250-9
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
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Publisher name
NAUN
Place of publication
Tenerife, Spain
Event location
Puerto De La Cruz, Tenerife
Event date
Nov 30, 2010
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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