Using RADFETs for alpha radiation dosimetry
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU113730" target="_blank" >RIV/00216305:26220/11:PU113730 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Using RADFETs for alpha radiation dosimetry
Original language description
The effects of alpha irradiation on the change in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show thatthese devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011
ISBN
9781457705854
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
1-4
Publisher name
IEEE
Place of publication
Sevilla, Spain
Event location
Sevila
Event date
Sep 19, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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