1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F11%3APU89234" target="_blank" >RIV/00216305:26220/11:PU89234 - isvavai.cz</a>

Result on the web

—

DOI - Digital Object Identifier

—

Result language

angličtina

Original language name

1/f noise models and low-frequency noise characteristics of InAlAs/ InGaAs devices

Original language description

Transport and low frequency noise characteristics of In0.52Al0.48As/InxGa1-xAs heterostructures were measured in wide temperature range (15 K to 450 K) and experi-mental results compared with intrinsic 1/f noise models, estimating mobility fluctuations due to various scattering processes.

Czech name

—

Czech description

—

Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

—

Project

<a href="/en/project/GA102%2F08%2F0260" target="_blank" >GA102/08/0260: Low-frequency noise in submicron MOSFET and HEMT structures</a><br>

Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year

2011

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Physica Status Solidi C

ISSN

1610-1642

e-ISSN

—

Volume of the periodical

8

Issue of the periodical within the volume

2

Country of publishing house

DE - GERMANY

Number of pages

3

Pages from-to

—

UT code for WoS article

—

EID of the result in the Scopus database

—