Parasitic Effects in Battery Charger Using New SiC Diodes

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU100589" target="_blank" >RIV/00216305:26220/12:PU100589 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Parasitic Effects in Battery Charger Using New SiC Diodes
Original language description
This article deals with a parasitic effects in highpower charger for electric vehicles. Because of the required minimum possible size and weight,while keeping the simplicity and reliability of the equipment, it was not easy to choose an appropriate design. It was used semiconductors on based SiC and switching frequency 100kHz. Due to the high switching frequency it was necessary to eliminate some parasitic effects occurring. This converter was implemented as a functional pattern, and then measurements were taken to verify the validation and functionality of the equipment.
Czech name
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Czech description
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Project
<a href="/en/project/7H09009" target="_blank" >7H09009: Nanoelectronics for an Energy Efficient Electrical Car</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
XII. International Conference on Low Voltage Electrical Machines 2012
ISBN
978-80-214-4602-1
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
110-112
Publisher name
Neuveden
Place of publication
Neuveden
Event location
Šlapanice
Event date
Oct 15, 2012
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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