Simulation of quantum dot in electrostatic fields

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU101158" target="_blank" >RIV/00216305:26220/12:PU101158 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Simulation of quantum dot in electrostatic fields

Original language description

Behavior of a nanostructure consisting of Si quantum dot (QD) embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field is simulated. The paper presents the wave functions psi, probability functions psi.psi* and energies of quantum states of a QD. Abrupt displacement of the peak of psi.psi* at a certain field value is elucidated as electron emission. The field distribution and the characteristics of the nanostructure quantum states are simulated numerically with help of Comsol Multiphysics Poisson-Schrödinger 2D model, developed by the authors.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

JA - Electronics and optoelectronics

OECD FORD branch

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Project

Result was created during the realization of more than one project. More information in the Projects tab.

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2012

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Mathematical Methods in Electromagnetic Theory

ISBN

978-1-4673-4479-1

ISSN

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e-ISSN

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Number of pages

4

Pages from-to

193-196

Publisher name

Neuveden

Place of publication

Kharkiv, Ukraine

Event location

Kharkov

Event date

Aug 28, 2012

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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