An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU105135" target="_blank" >RIV/00216305:26220/12:PU105135 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
An Accurate DC and RF Modeling of Nonlinear Spiral Divider in High Voltage MOSFET Transistor
Original language description
This paper presents an accurate DC and RF modeling of nonlinear spiral high resistance polysilicon divider. The spiral divider is a sensing part of the high voltage start-up MOSFET transistor operating up to 700 V. The strong electric field in low dopeddrain drift area located under the low doped polysilicon spiral divider results in parasitic effects that have a significant influence on DC and RF device characteristics and makes divider ratio voltage and frequency dependent. This paper demonstrates the strucyure of a proposed macro model, implemented voltage and frequency dependency, and physical explanation of these phenomena. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology
ISBN
978-1-4673-2475-5
ISSN
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e-ISSN
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Number of pages
3
Pages from-to
1-3
Publisher name
IEEE
Place of publication
Piscataway
Event location
Xi'an
Event date
Oct 29, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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