High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F12%3APU99482" target="_blank" >RIV/00216305:26220/12:PU99482 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4316/AECE.2012.03003" target="_blank" >http://dx.doi.org/10.4316/AECE.2012.03003</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4316/AECE.2012.03003" target="_blank" >10.4316/AECE.2012.03003</a>

Result language
angličtina
Original language name
High Performance Wideband CMOS CCI and its Application in Inductance Simulator Design
Original language description
In this paper, a new, differential pair based, low-voltage, high performance and wideband CMOS first generation current conveyor (CCI) is proposed. The proposed CCI has high voltage swings on ports X and Y and very low equivalent impedance on port X due to super source follower configuration. It also has high voltage swings (close to supply voltages) on input and output ports and wideband current and voltage transfer ratios. Furthermore, two novel grounded inductance simulator circuits are proposed as application examples. Using HSpice, it is shown that the simulation results of the proposed CCI and also of the presented inductance simulators are in very good agreement with the expected ones.
Czech name
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Czech description
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Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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