Noise sources in interface between mono-crystalline and amorphous semiconductors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU106162" target="_blank" >RIV/00216305:26220/13:PU106162 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Noise sources in interface between mono-crystalline and amorphous semiconductors
Original language description
RTS noise in Si/SiO2, InGaAs/InAlAs and GaN/AlGaN structures was analysed and several important trap parameters, such as cross-section, activation energy and position in the channel could be estimated.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 8th solid state surfaces and interfaces
ISBN
978-80-223-3501-0
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
128-129
Publisher name
Comenius University
Place of publication
Bratislava
Event location
Snolenice
Event date
Nov 18, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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