Activation energy of traps in GaN HFETs
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F13%3APU106798" target="_blank" >RIV/00216305:26220/13:PU106798 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Activation energy of traps in GaN HFETs
Original language description
Low frequency noise characteristics of GaN/AlGaN HFET structures were measured in wide temperature range and activation energy of traps were determined by several methods.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of 22nd International Conference on Noise and Fluctuations ICNF 2013, IEEE Catalog Number: CFP1392N-POD
ISBN
978-1-4799-0668-0
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
114-117
Publisher name
IEEE
Place of publication
Montpellier
Event location
Montpellier, France
Event date
Jun 24, 2013
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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