Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU109121" target="_blank" >RIV/00216305:26220/14:PU109121 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/MIEL.2014.6842161" target="_blank" >http://dx.doi.org/10.1109/MIEL.2014.6842161</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/MIEL.2014.6842161" target="_blank" >10.1109/MIEL.2014.6842161</a>

Result language
angličtina
Original language name
Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements
Original language description
This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.
Czech name
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Czech description
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Project
<a href="/en/project/LO1210" target="_blank" >LO1210: Energy for Sustainable Development</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the International Conference on Microelectronics, ICM
ISBN
978-1-4799-5297-7
ISSN
2159-1660
e-ISSN
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Number of pages
4
Pages from-to
349-352
Publisher name
IEEE Serbie
Place of publication
Belgrade, Serbie
Event location
Niš
Event date
May 13, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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