Electrochemical Deposition of Tin and Silicon Studied by EQCM
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU110192" target="_blank" >RIV/00216305:26220/14:PU110192 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1149/04801.0017ecst" target="_blank" >http://dx.doi.org/10.1149/04801.0017ecst</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1149/04801.0017ecst" target="_blank" >10.1149/04801.0017ecst</a>
Alternative languages
Result language
angličtina
Original language name
Electrochemical Deposition of Tin and Silicon Studied by EQCM
Original language description
Silicon and Tin thin films were prepared by electrochemical deposition on copper and nickel substrates in the Atmosbag. Electrochemical activity is described by cyclic voltammetry and for studying increase of weight were used EQCM. Deposited layers were studied by optic microscopy, electron microscopy and X-ray diffraction
Czech name
—
Czech description
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Classification
Type
D - Article in proceedings
CEP classification
CG - Electrochemistry
OECD FORD branch
—
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
13th International Conference on Advanced Batteries, Accumulators and Fuel Cells (ABAF)
ISBN
978-1-60768-383-4
ISSN
1938-5862
e-ISSN
—
Number of pages
6
Pages from-to
17-22
Publisher name
ECS
Place of publication
USA
Event location
Antonínská 1, Brno
Event date
Aug 26, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000338921200003