Electronic diode bridge for high current bipolar electronic loads
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F14%3APU110335" target="_blank" >RIV/00216305:26220/14:PU110335 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Electronic diode bridge for high current bipolar electronic loads
Original language description
This paper discusses full-wave bridge rectifiers made of electronic diodes for high current bipolar electronic loads. The presented solution minimizes the voltage drop and nonlinearity of loads in the region of low voltages. Compared to standard or Schottky diodes, electronic (also referred to as ideal) diodes exhibit very low voltage drop and power dissipation. In the bridges, MOSFETs with very low RDSon (low units of milliohms) are used. Ideal rectifiers have been traditionally used as structural elements in switched power supplies; they are often applied in low dissipation power switches and started to be utilized as full-wave rectifiers.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
O - Projekt operacniho programu
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
International Interdisciplinary PhD Workshop I2PhDW2014
ISBN
978-83-61956-29-7
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
97-101
Publisher name
Neuveden
Place of publication
Neuveden
Event location
Tatranské Matliare
Event date
May 20, 2014
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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