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NON-DESTRUCTIVE LOCAL DIAGNOSTICS OF OPTOELECTRONIC DEVICES

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F15%3APU116591" target="_blank" >RIV/00216305:26220/15:PU116591 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    NON-DESTRUCTIVE LOCAL DIAGNOSTICS OF OPTOELECTRONIC DEVICES

  • Original language description

    To obtain novel materials for emerging optoelectronic devices, deeper insight into their structure is required. To achieve this, the development and application of new diagnostic methods is necessary. To contribute to these goals, this dissertation thesis is concerned with local diagnostics, including non-destructive mechanical, electrical and optical techniques for examining the surface of optoelectronic devices and materials. These techniques allows us to understand and improve the overall efficiencyand reliability of optoelectronic device structures, which are generally degraded by defects, absorption, internal reflection and other losses. The main effort of the dissertation work is focused on the study of degradation phenomena, which are most often caused by both global and local heating, resulting in increased diffusion of ions and vacancies in the materials of interest. From a variety of optoelectronic devices, we have chosen two representative devices: a) solar cells - a large

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    Result was created during the realization of more than one project. More information in the Projects tab.

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů