ULTRA LOW POWER TUNABLE TRANSCONDUCTOR

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F16%3APU119228" target="_blank" >RIV/00216305:26220/16:PU119228 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
ULTRA LOW POWER TUNABLE TRANSCONDUCTOR
Original language description
This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice.
Czech name
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Czech description
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Project
<a href="/en/project/ED2.1.00%2F03.0072" target="_blank" >ED2.1.00/03.0072: Centre of sensor, information and communication systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 22st Conference STUDENT EEICT 2016
ISBN
978-80-214-5350-0
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
695-699
Publisher name
Neuveden
Place of publication
Brno
Event location
Brno
Event date
Apr 28, 2016
Type of event by nationality
CST - Celostátní akce
UT code for WoS article
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