Measurement of Power Transistors Dynamic Parameters

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F17%3APU124765" target="_blank" >RIV/00216305:26220/17:PU124765 - isvavai.cz</a>
Result on the web
<a href="https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70" target="_blank" >https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/978-3-319-65960-2_70" target="_blank" >10.1007/978-3-319-65960-2_70</a>

Result language
angličtina
Original language name
Measurement of Power Transistors Dynamic Parameters
Original language description
This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.
Czech name
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Czech description
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Project
<a href="/en/project/LO1210" target="_blank" >LO1210: Energy for Sustainable Development</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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