0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU125518" target="_blank" >RIV/00216305:26220/18:PU125518 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/document/8292043/" target="_blank" >http://ieeexplore.ieee.org/document/8292043/</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ICECS.2017.8292043" target="_blank" >10.1109/ICECS.2017.8292043</a>

Result language
angličtina
Original language name
0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier
Original language description
This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 uW power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.
Czech name
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Czech description
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Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).
ISBN
978-9972-1-2874-5
ISSN
—
e-ISSN
—
Number of pages
4
Pages from-to
152-155
Publisher name
IEEE
Place of publication
Batumi, Georgia
Event location
Batumi
Event date
Dec 5, 2017
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000426974200036

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