Protection Against PID Degradation at Photovoltaic Cell Level

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU129302" target="_blank" >RIV/00216305:26220/18:PU129302 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Protection Against PID Degradation at Photovoltaic Cell Level
Original language description
This paper deals with potential-induced degradation (PID), more specifically focuses on the PID resistive structure of a photovoltaic cell. In the article are compared the current – voltage characteristics of the reference and newly created PV cells, which are further supplemented by their external quantum efficiency. Finally, the PID resistive properties of the newly created photovoltaic cell are confirmed by an artificially created PID degradation.
Czech name
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Czech description
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Project
<a href="/en/project/LO1210" target="_blank" >LO1210: Energy for Sustainable Development</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Advanced Batteries Accumulators and Fuel Cells – 19th ABAF
ISBN
978-80-214-5651-8
ISSN
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e-ISSN
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Number of pages
5
Pages from-to
125-129
Publisher name
Brno University of Technology, Faculty of Electrical Engineering and Communication, Department of Electrical and Electronic Technology
Place of publication
Brno
Event location
Brno
Event date
Aug 26, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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