Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F18%3APU134906" target="_blank" >RIV/00216305:26220/18:PU134906 - isvavai.cz</a>
Result on the web
<a href="https://dx.doi.org/10.1109/MCAS.2018.2821760" target="_blank" >https://dx.doi.org/10.1109/MCAS.2018.2821760</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/MCAS.2018.2821760" target="_blank" >10.1109/MCAS.2018.2821760</a>
Alternative languages
Result language
angličtina
Original language name
Exploring the Dynamics of Real-World Memristors on the Basis of Circuit Theoretic Model Predictions
Original language description
The memristor represents the key circuit element for the development of the constitutive blocks of future non-volatile memory architectures and neuromorphic systems. However, resistance switching memories offer a plethora of further opportunities for the electronics of the future. By virtue of the compatibility between the well-established CMOS technology and the fabrication process of most memristors, the exploitation of the peculiar dynamic behaviour of resistance switching memories, which, in general, differ depending upon their material composition, may allow the development of new circuits, which, processing information in unconventional forms, may extend and/or complement the functionalities of state-of-the-art electronic systems. Further, the attractive capability of real-world non-volatile memristors to store and process information in the same physical nanoscale location open the fascinating opportunity to improve the low throughput of Von Neumann computing machines, due to the limited bandwidth of the bus transferring data between the memory and the central processing unit. Finally, the extreme sensitivity of their electrical behaviour to small changes in their initial condition/input and the intrinsic stochastic variability in their switching dynamics may be harnessed to develop innovative bio-signal sensors as well as new cryptographic circuits and systems. The derivation of accurate mathematical models for the electrical behaviour of real-world memristor nano-devices, and their later circuit-and system-theoretic investigation aimed at drawing a comprehensive picture of their peculiar nonlinear dynamic behaviour under the set of inputs and initial conditions expected of the application of interest are fundamental steps towards their conscious future use in integrated circuit design. With this in mind, the present paper adopts a powerful theoretic tool known as Dynamic Route Map to analyse some of the most reliable physics-based models of real-world resis
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GA18-21608S" target="_blank" >GA18-21608S: Memristors and other unconventional circuit elements</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
IEEE CIRC SYST MAG
ISSN
1531-636X
e-ISSN
1558-0830
Volume of the periodical
18
Issue of the periodical within the volume
2
Country of publishing house
US - UNITED STATES
Number of pages
29
Pages from-to
48-76
UT code for WoS article
000433912200007
EID of the result in the Scopus database
2-s2.0-85047960932