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Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216305%3A26220%2F19%3APU134658" target="_blank" >RIV/00216305:26220/19:PU134658 - isvavai.cz</a>

  • Result on the web

    <a href="https://ieeexplore.ieee.org/document/8953098" target="_blank" >https://ieeexplore.ieee.org/document/8953098</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/APCCAS47518.2019.8953098" target="_blank" >10.1109/APCCAS47518.2019.8953098</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Improved MESFET/pHEMT Models and Their Comprehensive Comparison With Standard Ones

  • Original language description

    In the paper, we suggest several new updates to the equations that ordinarily describe the MESFETs and pHEMTs in both DC and time domains. We have composed some novel forms of the equations that are especially convenient for accurate describing transconductance voltage dependences, which is important for realistic modeling the low noise amplifiers with pHEMTs including calculations of their IP3 points. In other words, the attention is not only directed to the precision of the equation themselves, but also to the accuracy of the derivatives of them with respect to both gate-source and gate-drain voltages (up to the third order). The paper contains comprehensive comparisons of our recently updated models with our previous one and many others; two pHEMTs have been used for comparisons: the first working from 1 GHz up to 18 GHz, and the second operating at the frequencies greater than 100 GHz. Both DC characteristics and high-frequency s-parameters have been compared, and the comparisons show that the precision of our model modifications is at least comparable with the model like TriQuint ones.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

    <a href="/en/project/TH02010981" target="_blank" >TH02010981: Development of efficient air-conditioning system for training jet airplane</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2019 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)

  • ISBN

    978-1-7281-2939-6

  • ISSN

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    149-152

  • Publisher name

    IEEE

  • Place of publication

    USA

  • Event location

    Bangkok, Thajsko

  • Event date

    Nov 11, 2019

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000530745700038